Thallium monosulfide single crystal was prepared and characterized by x–ray diffraction. The electrical measurements in the temperature range form 100 to 360 K, show that σ⊥= 8.9 x 10–7 (Ω.cm)–1 when the current flow direction makes right angle to the cleavage plane of the crystals, and σ // = 1.39 x 10–7 (Ω.cm)–1 when the current flows is parallel to the cleavage plane. The width of the band gap was calculated from the electrical data and found to be Eg = 1.1eV. The anisotropy of the electrical conductivity (σ⊥/σ//) was also studied in this work. The photosensitivity was calculated for different levels of illumination which showed that the recombination process in TIS single crystals is monomolecular
(2007). Preparation, Electrical Conduction, Hall Effect and Photoconductivity of Thallium Monosulfide Single Crystal. Egyptian Journal of Solids, 30(2), 199-210. doi: 10.21608/ejs.2007.149039
MLA
. "Preparation, Electrical Conduction, Hall Effect and Photoconductivity of Thallium Monosulfide Single Crystal". Egyptian Journal of Solids, 30, 2, 2007, 199-210. doi: 10.21608/ejs.2007.149039
HARVARD
(2007). 'Preparation, Electrical Conduction, Hall Effect and Photoconductivity of Thallium Monosulfide Single Crystal', Egyptian Journal of Solids, 30(2), pp. 199-210. doi: 10.21608/ejs.2007.149039
VANCOUVER
Preparation, Electrical Conduction, Hall Effect and Photoconductivity of Thallium Monosulfide Single Crystal. Egyptian Journal of Solids, 2007; 30(2): 199-210. doi: 10.21608/ejs.2007.149039
)
View on SCiNiTO