Transport Properties of Ga0.45In0.55Sb

Document Type : Original Article

Abstract

The thermoelectric power and Hall measurement carried out on the asprepared sample of Ga0.45 In0.55 Sb confirmed that the sample is n-type semiconductor. The existence of two minima at 3.5 and 4.8 Vcm-1 on the σ - E characteristic reflects the occurrence of the Gunn effect. A metallic like behavior of the sample is observed and interpreted. The effect of the magnetic field on the concentration of the electrons is apparent