The dielectric properties of silicon carbide SiC have been measured using cavity perturbation technique. Three tubes with diameter 2 mm, 3 mm, and 5 mm were filled with the powerful material of SiC. The measurements were taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214 GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25oC to 1800oC. The electrical conductivity and the activation energy of SiC at the above frequencies and temperatures were calculated using the measured real and imaginary components of the complex permittivity.
(2002). Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature. Egyptian Journal of Solids, 25(2), 263-273. doi: 10.21608/ejs.2002.150483
MLA
. "Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature". Egyptian Journal of Solids, 25, 2, 2002, 263-273. doi: 10.21608/ejs.2002.150483
HARVARD
(2002). 'Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature', Egyptian Journal of Solids, 25(2), pp. 263-273. doi: 10.21608/ejs.2002.150483
VANCOUVER
Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature. Egyptian Journal of Solids, 2002; 25(2): 263-273. doi: 10.21608/ejs.2002.150483
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