CdTe films covered with thin layer of Zn were deposited by thermal evaporation technique. Zn interdiffusion in CdTe was studied by annealing the prepared films at different temperatures (Tan ) and for different time interval (tan ). The effect of thermal annleaing temperature (Tan ) and time of annealing (Tan ) on the optical bandgap energy (Eg), diffusion length (L) and the corresponding diffuison coefficient (D) is discussed. Results revealed that during thermal annealing process at 100 °C and after a time of 30 min, a thin layer of CdZnTe mixed structure have been formed on the top of CdTe films with variable bandgap between 1.74 and 2.05 eV. The formation of this mixed structure is attributed to the diffusion process of Zn atom to the top surface of CdTe film.
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