(1993). QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET. Egyptian Journal of Solids, 16(1), 23-30. doi: 10.21608/ejs.1993.151908
MLA
. "QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET". Egyptian Journal of Solids, 16, 1, 1993, 23-30. doi: 10.21608/ejs.1993.151908
HARVARD
(1993). 'QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET', Egyptian Journal of Solids, 16(1), pp. 23-30. doi: 10.21608/ejs.1993.151908
VANCOUVER
QUANTUM EFFICIENCY OF AN INVERSION LAYER SILICON PHOTODIODE IN THE NEAR ULTRAVIOLET. Egyptian Journal of Solids, 1993; 16(1): 23-30. doi: 10.21608/ejs.1993.151908