Influence of band gap and carrier concentration on ZnO/CuO solar cells performance

Document Type : Original Article

Authors

1 Physics department, Faculty of Science, Kafrelsheikh University,

2 Physics Department, Faculty of Science, Kafrelsheikh University, KafrelSheikh, 33516, Egypt.

3 Faculty of Engineering Basic science Department MUST University Cairo Egypt.

Abstract

Here SCAPS program is employed to simulate the effect of band gab and carrier concentration on the basic parameters of CuO/ZnO solar cells including short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF), and the efficiency (η). In such argument, CuO film was used as active material while ZnO thin film as window layer for simulated devices. The results of the simulated solar cells reveal that the carrier concentrations of ZnO and CuO thin films should be around 4×1020 and 1×1016 cm-3 to have performance higher than of 24.5 %. Moreover, the value of band gaps for such absorber and window layers should be of about 3.25 and 1.35 eV to have higher efficacies. The principal factors that controlling such performances of devices are built-in potential, light absorbing, generation rate and recombination rate of charge carriers. Such results are promising as step forward to fabricate high efficiency photovoltaics based on inorganic nanomaterials.

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